absolute maximum ratings (t case = 25c unless otherwise stated) buz50a buz50b v ds drain ? source voltage v gs gate ? source voltage i d continious drain current i dm maximum pulsed drain current p d total power dissipation at t case 25c t stg storage temperature range t j operating junction temperature range 1000v 1000v 20v 20v 1.0a 1.5a 4.0a 4.5a 75w ?65c to 200c 200c buz50a?220m buz50b?220m mechanical data dimensions in mm mos power n-channel enhancement mode transistors 16.5 (0.65) 1.5(0.53) 10.6 (0.42) 12.70 (0.50 min) 2.54 (0.1) bsc 3.70 dia. nom 1 2 3 0.8 (0.03) 2.70 (0.106) 1.0 (0.039) 4.6 (0.18) 10.6 (0.42) to220m (to-257ab) - isolated metal package pin 1 ? gate pin 2 ? drain pin 3 ? source features hermetic to220 isolated metal package cecc screening options jan level screening options semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 5541 issue 1 applications: hermetically sealed version for high relia- bility power linear and switching applica- tions
buz50a?220m buz50b?220m note: *pulsed : pulse duration = 300 s , duty cycle 2% thermal data r jc thermal resistance junction ? case 1.67 r ja thermal resistance junction ? ambient 75 semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 5541 issue 1 parameter test conditions min. typ. max. unit v gs = 0 i d = 5.0ma v ds = 1000v v gs = 0v t j = 100 c v gs = 20v v ds = 0 v ds = v gs i d = 1.0ma t j = 100 c v gs = 10v i d = 0.5a t j = 100 c v gs = 10v i d = 1.0a v ds = 15v i d = 0.5a v gs = 10v i d = 0.5a v gs = 0 v ds = 25v f = 1mhz t j = 100 c i d = 0.5a v ds = 125v r gen = 50 ? i s = 1.0a v gs = 0v electrical characteristics (t c = 25 c unless otherwise stated) drain ? source breakdown voltage zero gate voltage drain current gate ? body leakage current gate threshold voltage drain source on voltage forward transconductance drain ? source on ? state resistance * input capacitance output capacitance reverse transfer capacitance turn ? on delay time rise time turn ? off delay time fall time diode forward voltage forward turn on time reverse recovery time 1000 0.25 2.5 500 2.0 4.5 1.5 4.0 5.0 10 12 0.5 10 1200 300 80 50 150 200 100 39 1.0 250 420 v ma na v s ? pf ns v ns bv dss i dss i gss v gs(th) * v ds(on) * g fs * r ds(on) * c iss c oss c rss t d(on) * t r * t d(off) * t f * v sd * t on t rr source ? drain diode characteristics c/w
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